Mitsubishi Electric Corp. has introduced the ML7xx42 distributed feedback laser diode (DFB-LD) and the PD8xx24 avalanche photodiode (APD) for use in optical network units (ONUs) of symmetric 10-Gigabit Ethernet Passive Optical Network (10G-EPON) applications.
The ML7xx42 DFB-LD incorporates an AlGaInAs active layer that provides 10 mW of output power under low operating current even in high-temperature conditions, Mitsubishi says. The laser diode uses an improved modulation bandwidth to perform smoothly at 10 Gbps. The DFB-LD is housed in a TO-CAN package with a diameter of 4.8 mm and is equipped with an aspherical lens cap to provide a high coupling efficiency. The ML7xx42 has its light emission peak at 1270 nm; the output power is 10 mW at operating currents of less than 70mA. It is designed for the operating temperature range from -5 to +75°C.
Meanwhile, the APD leverages AlInAs for its multiplication layer. This enables what Mitsubishi asserts is an industry-leading sensitivity of typically 31.5 dBm. Packaged in a 5.4-mm TO-CAN with a ball lens cap, the PD8xx24 operates in the 1570-nm wavelength band and has an APD responsivity of typically 0.8 A/W, along with a bandwidth of typically 6.5 GHz.
For more information on optical components and suppliers, visit the Lightwave Buyers Guide.