Vitesse Semiconductor Corporation (NASDAQ:VTSS) announced its latest process technology for manufacture of analog and digital integrated circuits (ICs) for data transmission at rates in excess of 40Gb/s. The process is built around Indium Phosphide (InP) heterojunction bipolar transistors (HBTs). The first generation of the InP HBT process will be used to manufacture physical layer ICs for SONET OC-768 applications and circuitry for 10Gb/s systems that use RZ encoded data.
Succeeding generations will provide ICs with up to 100Gb/s levels of performance and integrated optical devices, thereby providing the capability to manufacture true monolithic optical integrated circuits (OEIC's). Vitesse's extensive expertise in the development of manufacturable, high-performance compound semiconductor technologies makes them uniquely suited to provide InP HBT IC technology in the timeframe required for the projected volume ramp of OC-768 communications systems.
The first generation of the InP HBT process uses a vertical, mesa isolated NPN bipolar transistor having a demonstrated peak ftau of 150GHz, and a peak fmax of 160GHz. The transistor performance is consistent with the bandwidth and edge rate requirements of circuits operating at 40Gb/s - 50Gb/s. This performance level enables the use of system architectures that require higher data rates to implement forward error correction (FEC). The extra margin provided by the InP process technology offers a significant advantage over competing technologies, since it has the capability of data rates well beyond 50Gb/s.
Vitesse's InP manufacturing effort is the result of a broad comparative study of system requirements and projected process performance across several IC technologies. "InP is the only IC technology that combines the high frequency performance and high breakdown voltage required to implement all transmit, receive and clock recovery functions for 40Gb/s systems," stated Alan Huelsman, PhD, Vitesse's director, InP Program. "All other IC technology choices result in compromises in system performance or complications in architecture for thermal or functional partitioning considerations. In addition, InP is the only IC technology that provides a path to monolithic integration of long wavelength optical sources and detectors," continued Huelsman.
Vitesse began development of InP HBT technology in January 2001, using the company's Camarillo, Calif., four-inch Gallium Arsenide production line. Approximately fifty percent of the line has been converted to process InP wafers. First HBT devices were successfully completed in December 2000. First working circuits, including integrated OEICs, are now in characterization, several months ahead of schedule.
Vitesse's InP process leverages the company's 17 years of experience in adapting standard IC manufacturing techniques for use with compound semiconductors. "The intellectual property accumulated through the development of VLSI GaAs circuits provides a solid framework for the creation of an InP HBT process with the twin goals of high performance and high yield," concluded Huelsman. First generation products will sample in Q1'02. Demonstration products have recently been sampled to development partners. The company contemplates offering foundry access to the technology for strategic partners.
About Vitesse Semiconductor Corporation:
Vitesse Semiconductor Corporation is a designer and supplier of innovative, high-performance integrated circuits (ICs) used in next generation networking and optical communications equipment. For more information, visit www.vitesse.com.