January 3, 2002--A strategic partnership between Intense Photonics (High Blantyre, UK) and IQE (Cardiff, UK) involving the design, modeling, and growth of complex compound semiconductor crystal structures was announced today.
Under the agreement, IQE will provide gallium arsenide (GaAs) and indium phosphide (InP) based epitaxy structures to support Intense Photonics' work in component sectors including pump lasers and photonic switches for C and L optical networking frequency bands. IQE has started delivering trial wafers, used by Intense Photonics' design team to prototype, and by the operations department to commission the QWI wafer fabrication line currently being installed.
Intense Photonics expects to benefit from the partnership by maximizing yields and performance as it commercializes its quantum well intermixing process for photonic ICs.